FQB25N33TM_F085 datasheet, mosfet equivalent, Fairchild Semiconductor

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Features and benefits

* 25A, 330V, RDS(on) = 0.23Ω @VGS = 10V
* Low gate charge (typical 58nC)
* Low Crss (typical 40pF)
* Fast switching
* 100% avalanche tested
* Impr.

Description

These N-Channel enhancement mode power field effect transistors are produced using Farichild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimized on-state resistance, provide superior switc.

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